dmn61d8l vtq document number: ds 37822 rev. 2 - 2 1 of 7 www.diodes.com september 2015 ? diodes incorporated DMN61D8LVTQ new product advanced information product summary v (br)dss r ds(on) max i d max t a = + 25 c 6 0v 1.8 ? @ v gs = 5 v 470 m a 2.4 ? @ v gs = 3 v description and applications dmn61d8lvt p rovides a single component solution for switching inductive loads such as relays, solenoids, and small dc moto rs in a utomotive applications, without the need of a freewheeling diode. dmn61d8lvt accepts logic level inputs, t hus allowing it to be driven by logic gates, inverters and microcontr ollers. it is ideally suited for d oor, window and a ntenna r elay coils. features and benefits ? provides a reliable and robust interface between sensitive logic and dc relay coils ? replaces 3 to 4 discrete components enabling pcb footprint to be reduced ? internal active clamp remo ves the need for external zener diod e ? totally lead - free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability ? ppap capable (note 4) mechanical data ? case: tsot26 ? case material: molded pl astic, green molding compound; ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals connections: see diagram ? terminals: finish C matt e tin a nnealed over copper l eadframe ; solderable per mil - std - 202, method 208 ? weight: 0.013 grams (a pproximate) ordering information (note 5 ) part number case packaging dmn61d8lvt q - 7 tsot26 3 , 000/tape & reel dmn61d8lvt q - 13 tsot26 10 , 0 00/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . a utomotive products are aec - q101 qualified and are ppap capable. automotive, aec - q101 and standard products are electrically and thermally the same, except where specified. for more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. 5 . for packaging details, go to our website at http : //www.diodes.com/products/packages.html . marking information date code key year 2014 2015 2016 2017 201 8 201 9 20 20 code b c d e f g h month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view equivalent circuit top view internal schematic 1d8 = product type marking code ym = date code marking y or = year (ex: b = 20 14 ) m = month (ex: 9 = september) tsot26 tsot26 esd p rotected e3
dmn61d8l vtq document number: ds 37822 rev. 2 - 2 2 of 7 www.diodes.com september 2015 ? diodes incorporated DMN61D8LVTQ new product advanced information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss 60 v gate - source voltage v gss 12 v continuous drain current (note 7 ) steady state t a = +25c t a = + 70 c i d 630 500 m a maximum continuous body diode forward current (note 7 ) i s 0.5 a single pulse drain - to - source avalanche energy (for relays coils/inductive loads of 80 peak power dissipation, drain?to?source load dump pulse, drain?to?source rsource = 0.5, t = 300 ms) (for relays coils/inductive loads of 80 or higher) (tj initial = drain?to?source (waveform: rsource = 10, t = 2.0 ms) (for relays coils/inductive loads of 80 inductive switching transient 2, drain?to?source (waveform: rsource = 4.0, t = 50 s) (for relays coils/inductive loads of 80 or higher) (tj initial = reverse battery, 10 minutes (drain?to?source) s coils/inductive loads of 80 rev?bat dual?volt thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 6 ) p d 820 m w thermal resistance, junction to ambient (note 6 ) s teady state r ja 154 c/w total power dissipation (note 7 ) p d 1 , 090 m w thermal resistance, junction to ambient (note 7 ) s teady state r ja 116 c/w operating and storage temperature range t j, t stg - 55 to + 150 c notes: 6 . device mounted on fr - 4 pcb, with minimum recommended pad layout . 7 . device mounted on 1 x 1 fr - 4 pcb with high coverage 2oz. c opper, single sided.
dmn61d8l vtq document number: ds 37822 rev. 2 - 2 3 of 7 www.diodes.com september 2015 ? diodes incorporated DMN61D8LVTQ new product advanced information electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 60 ? ? gs = 0v, i d = 10 m a zero gate voltage drain current i dss ? ? ds = 60v, v gs = 0v v ds = 12 v, v gs = 0v gate - source leakage i gss ? ? gs = 5 v, v ds = 0v v gs = 3 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) 1. 3 ? ds = v gs , i d = 1m a static drain - source on - resistance r ds(on) ? gs = 5 v, i d = 0. 15 a v gs = 3 v, i d = 0. 15 a forward transfer admittance |y fs | 80 ? ? ds = 1 2 v , i d = 0. 15 a diode forward voltage v sd ? ? ? ? gs = 0v, i s = 0. 1 5 a dynamic characteristics (note 9 ) input capacitance c iss ? ? ds = 12 v, v gs = 0v f = 1.0mhz output capacitance c oss ? ? rss ? ? g ? ? gs = 5 v, v ds = 12 v, i d = 150 m a gate - source charge q gs ? ? gd ? ? d(on) ? ? dd = 12 v, v gs = 5v. turn - on rise time t r ? ? d(off) ? ? f ? ? notes: 8. short duration pulse test used to minimize self - heating effect. 9 . guarante e d by design. not subject to product testing v , drain-source voltage (v) ds figure 1 typical output characteristic i , d r a i n c u r r e n t ( a ) d 0 0.2 0.4 0.6 0.8 1 0 1 2 3 4 5 v = 1.8v gs v = 2.0v gs v = 2.5v gs v = 3.0v gs v = 4.0v gs v = 4.5v gs v = 5.0v gs v = 10v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d t = 85c a 0 0.2 0.4 0.6 0.8 1 1 1.5 2 2.5 3 3.5 t = -55c a t = 25c a t = 125c a t = 150c a v = 5.0v ds
dmn61d8l vtq document number: ds 37822 rev. 2 - 2 4 of 7 www.diodes.com september 2015 ? diodes incorporated DMN61D8LVTQ new product advanced information i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 v = 3v gs v = 5v gs v , gate-source voltage (v) gs figure 4 typical transfer characteristic r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 1 2 3 4 5 0 2 4 6 8 10 12 i = 150ma d i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.5 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 1 v = 5v gs t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a t , junction temperature ( c) j ? figure 6 on-resistance variation with temperature r , d r a i n - s o u r c e d s ( o n ) o n - r e s i s t a n c e ( n o r m a l i z e d ) 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 v = 3v gs i = 150ma d v = 5v gs i = 150ma d t , junction temperature ( c) j ? figure 7 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 v = 5v gs i = 150ma d v = 3v gs i = 150ma d t , junction temperature ( c) j ? figure 8 gate threshold variation vs. ambient temperature v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 -50 -25 0 25 50 75 100 125 150 i = 1ma d i = 250a d
dmn61d8l vtq document number: ds 37822 rev. 2 - 2 5 of 7 www.diodes.com september 2015 ? diodes incorporated DMN61D8LVTQ new product advanced information v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s 0 0.2 0.4 0.6 0.8 1 0 0.3 0.6 0.9 1.2 1.5 t = -55c a t = 150c a t = 25c a t = 85c a t = 125c a v , drain-source voltage (v) ds figure 10 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t 0 1 10 100 0 5 10 15 20 25 30 35 40 f = 1mhz c rss c oss c iss q , total gate charge (nc) g figure 11 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s 0 1 2 3 4 5 6 7 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v = 12v ds i = 150ma d 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 d = 0.5 d = 0.7 d = 0.005 r (t) = r(t) * r thja thja r = 154c/w ? ja duty cycle, d = t1/ t2 d = single pulse d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.3 d = 0.9 t1, pulse duration time (sec) figure 13 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e
dmn61d8l vtq document number: ds 37822 rev. 2 - 2 6 of 7 www.diodes.com september 2015 ? diodes incorporated DMN61D8LVTQ new product advanced information package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. tsot26 dim min max typ a ? ? ? a1 0.01 0.10 ? a2 0.84 0.90 ? d ? ? e ? ? e1 ? ? b 0.30 0.45 ? c 0.12 0.20 ? e ? ? e1 ? ? l 0.30 0.50 l2 ? ? 0 8 4 1 4 12 ? all dimensions in mm dimensions value (in mm) c 0.950 x 0.700 y 1.000 y1 3.199 c a1 l e1 e a2 d e1 e 6x b ? 4x 1 ?? l2 a y1 c c x (6x) y (6x)
dmn61d8l vtq document number: ds 37822 rev. 2 - 2 7 of 7 www.diodes.com september 2015 ? diodes incorporated DMN61D8LVTQ new product advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indem nify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applic ation. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this d ocument is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are spe cifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or syst ems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. custo mers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support device s or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, cu stomers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes .com
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